Samsung Electronics presented its AI infrastructure vision at the Future of Memory and Storage (FMS) 2026 conference. The company introduced zHBM concept models, a 3D memory technology that stacks high-bandwidth memory directly onto AI accelerator chips. This design increases processing speed and energy efficiency.
Samsung also debuted the industry’s first V10 BV-NAND flash memory. This chip features over 400 layers and utilizes wafer bonding technology. The new architecture increases storage density by approximately 58% compared to the previous generation.
These innovations target critical data bottlenecks within AI systems. The developments support the high-performance computing workloads required for next-generation AI applications.