Samsung Electronics is expanding its strategic partnership with ASML to develop and deploy next-generation High NA EUV lithography. The collaboration aims to advance semiconductor manufacturing to meet the performance demands of the AI era.
Samsung plans to integrate ASML’s advanced High NA EUV technology into its high-volume DRAM manufacturing process by 2028.
The companies are also co-developing next-generation 12-inch photomask technology. This initiative is expected to increase factory productivity and improve cost-effectiveness for future leading-edge chips.