Samsung Electronics will use rival TSMC’s 3-nanometer process to manufacture the base die for Nvidia’s next-generation custom high-bandwidth memory, known as NVHBM. The move departs from Samsung’s traditional strategy of producing all HBM components in-house and responds to Nvidia’s specific technical requirements.
The decision underscores the immense demand for advanced AI chips and the complex supply chains behind them. Samsung will continue to use its own 4-nanometer process for standard HBM products.
The arrangement highlights the competition and cooperation shaping the semiconductor industry as companies work to meet rising AI demand.