Kioxia Holdings Corporation and SanDisk have commenced production of 10th-generation 3D NAND flash memory. The manufacturing takes place at their Fab2 joint-venture facility in Kitakami, Japan.
The new memory chips utilize a 332-layer stack. This architecture increases bit density by approximately 59% compared to the 8th generation. The technology specifically targets growing storage requirements for AI and data center applications.
Kioxia has initiated sample shipments of 1-terabit devices using this technology. The 10th-generation memory achieves interface speeds of 4.8 Gb/s. This represents a 33% speed improvement over previous versions.
The new hardware also provides enhanced power efficiency. The partners recently extended their joint-venture agreement through December 2034.